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A novel characterization tool for the study of dielectric breakdown of ultra-thin oxide MOS structures

G. Basso, F. Crupi, B. Neri, R. Giannetti, S. Lombardo

16th IEEE Instrumentation and Measurement Technology Conference - IMTC 1999, Venecia (Italia). 24-26 mayo 1999


Palabras clave: Dielectric breakdown, Electric breakdown, Voltage, Fluctuations, Instruments, Stress, Low-frequency noise, Noise measurement, Microcomputers, Testing


DOI: DOI icon https://doi.org/10.1109/IMTC.1999.776154

Fecha de publicación: 1999-05-24.



Cita:
G. Basso, F. Crupi, B. Neri, R. Giannetti, S. Lombardo, A novel characterization tool for the study of dielectric breakdown of ultra-thin oxide MOS structures, 16th IEEE Instrumentation and Measurement Technology Conference - IMTC 1999, Venecia (Italia). 24-26 mayo 1999.

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