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Electric field effects in Fibonacci superlattices

M. Castro, F. Dominguez-Adame

Physics Letters A Vol. 225, nº. 4-6, pp. 321 - 325

Resumen:

We present a thorough study of transmission and localization properties of Fibonacci superlattices, both in flat band conditions and subject to homogeneous electric fields perpendicular to the layers. We use the transfer matrix formalism to determine the transmission coefficient and the degree of localization of the electronic states. We find that the fragmentation pattern of the electronic spectrum is strongly modified when the electric field is switched on, this effect being more noticeable as the system length increases. We relate those phenomena to field-induced localization of carriers in Fibonacci superlattices.


Palabras Clave: semiconductor superlattice, bloch oscillations, gaas


Índice de impacto JCR y cuartil WoS: 2,300 - Q2 (2023)

Referencia DOI: DOI icon https://doi.org/10.1016/S0375-9601(96)00874-2

Publicado en papel: Febrero 1997.

Publicado on-line: Mayo 1998.



Cita:
M. Castro, F. Dominguez-Adame, Electric field effects in Fibonacci superlattices. Physics Letters A. Vol. 225, nº. 4-6, pp. 321 - 325, Febrero 1997. [Online: Mayo 1998]


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