Resumen:
We propose a simple and versatile model to understand the deviations from the well-known Kolmogorov-Johnson-Mehl-Avrami kinetics theory found in metal recrystallization and amorphous semiconductor crystallization. We analyze the kinetics of the transformation and the grain-size distribution of the product material, finding a good overall agreement between our model and available experimental data. The information so obtained could help to relate the mentioned experimental deviations due to preexisting anisotropy along some regions, to a certain degree of crystallinity of the amorphous phases during deposition, or more generally, to impurities or roughness of the substrate. (C) 1999 American Institute of Physics. [S0003-6951(99)02641-8].
Palabras Clave: recrystallization, simulation, nucleation, growth, metals
Índice de impacto JCR y cuartil WoS: 3,500 - Q2 (2023)
Referencia DOI:
https://doi.org/10.1063/1.124965
Publicado en papel: Octubre 1999.
Publicado on-line: Octubre 1999.
Cita:
M. Castro, F. Dominguez-Adame, A. Sánchez, T. Rodriguez, Model for crystallization kinetics: Deviations from Kolmogorov-Johnson-Mehl-Avrami kinetics. Applied Physics Letters. Vol. 75, nº. 15, pp. 2205 - 2207, Octubre 1999. [Online: Octubre 1999]
